| PART |
Description |
Maker |
| W83194BR-73005 W83194BR-730 |
166MHZ CLOCK FOR SIS CHIPSET
|
http://
WINBOND[Winbond]
|
| KVR400D2N3/1G |
1024MB 400MHz DDR2 Non-ECC CL3 DIMM 1024MB00MHz的DDR2内存非ECC CL3内存
|
Omron Electronics, LLC
|
| KVR133X72RC3L/1024 |
1024MB 133MHz ECC Registered CL3 Low Profile DIMM 1024MB33MHz的ECC的超薄注册CL3内存
|
RIA Connect
|
| KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| KVR133X64C3256 KVR133X64C3_256 KVR133X64C3/256 |
256MB 32M x 64Bit PC133 CL3 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| ADXL210E ADXL210JE ADXL210AE ADXL210 |
0 g Dual Axis Accelerometer with Duty Cycle Outputs
ADXL210E: Low-Cost 10 g Dual-Axis Accelerometer with Duty Cycle Data Sheet (Rev. 0. 5/02)
|
AD[Analog Devices]
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
|
GSI Technology
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| UT1553BRTIGCA UT1553B-RTIPC 5962-8862801-XA 5962-8 |
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish optional.
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish gold.
RTI remote terminal interface. 10% to 35% clock duty cycle. Jan class Q. Lead finish solder.
From old datasheet system
BCRT Bus Controller/Remote Terminal/Monitor
|
Aeroflex Circuit Technology
ETC[ETC]
|
| IR2085SPBF IR2085S |
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER 高速，100V的，自振0％的占空比，半桥驱动
HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER
HIGH SPEED 100V SELF OSCILLATING 50% DUTY CYCLE HALF-BRIDGE DRIVER
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
